• Semiconductors & Devices

FOR IMMEDIATE RELEASE No. 3577

  • Chip (rendition)

    Chip (rendition)

  • 112Gbaud PAM4 eye diagram<br>(back-to-back, Vpp=1.2V)

    112Gbaud PAM4 eye diagram
    (back-to-back, Vpp=1.2V)

TOKYO, March 2, 2023 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 200Gbps (112Gbaud four-level pulse-amplitude modulation (PAM4)) electro-absorption modulator laser diode (EML) chip that doubles the speed of the company's existing 100Gbps EML chip thanks to a proprietary hybrid waveguide structure. Support for coarse wavelength division multiplexing (CWDM) of four wavelengths realizes 800Gbps transmission using four chips or 1.6Tbps using eight chips.
The greatly improved performance is expected to raise the transmission speed of optical transceivers used in data centers to respond to mushrooming data-traffic demand due to the rapid growth of video distribution services and cloud computing.
Mitsubishi Electric will present its new chip at the Optical Fiver Communication Conference and Exhibition (OFC) 2023 in San Diego, USA this March 5-9.

Inquiry

Media contact

Customer Inquiries

Related articles

  • Semiconductors & Devices