TOKYO, August 20, 2024 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new 200Gbps PIN-photodiode (PD) chip for use in next-generation optical transceivers to support 800Gbps and 1.6Tbps fiber communication from October 1 this year. The addition of the new receiver chip to Mitsubishi Electric's optical device lineup will enable existing devices capable of transmitting at 800Gbps/1.6Tbps to newly receive optical data at these same speeds, thereby expanding the communication capacity of optical transceivers, including for high-speed, high-capacity communication in data centers.

The upcoming introduction of the 200Gbps PIN-PD chip for optical reception follows Mitsubishi Electric's launch of a mass-produced chip for optical transmission, the 200Gpbs (112Gbaud four-level pulse-amplitue modulatio [PAM4]) electro-absorption modulator laser diode (EML), in April this year. Leveraging the company's well-established expertise in optical devices, the newly announced PD chip was developed by minimizing the photoelectric conversion area within a chip structure that integrates backside illumination^* and a convex lens.

* A structure in which the pin junction is on the front side of the semiconductor substrate, allowing incidental light to be received on the opposite (back) side