In our high-frequency & optical device business, we apply our core competence—compound semiconductor technology—to application fields such as information and communications and sensing. By creating new value that meets the needs of the times, we contribute to the realization of a safe, secure lifestyle and a comfortable digital society. The recent surge in data traffic—driven by high-resolution video streaming and the growing adoption of generative AI technologies—has created an unprecedented demand for higher-speed networks. To address such requirements, our optical device business began mass production of a 200Gbps EML*1 chip for optical transmission in April 2024, as optical devices for use in optical transceivers*2 that support next-generation data center communication speeds of 800Gbps*3 and 1.6Tbps*4. We are continuously expanding our EML chip production capacity to meet strong demand, with a plan to more than triple capacity by fiscal 2030 compared with fiscal 2026. This will contribute to the enhancement of speed and capacity in data center communications.
Semiconductor & Device
Leading Social Change through Semiconductor Evolution and Innovation
The semiconductor & device business comprises the power device business and the high-frequency & optical device business.
SiC/Si Power Semiconductors: Reducing the Power Consumption of Customer Devices
HVIGBT Module XB Series High-Capacity Power Semiconductors for Railway Vehicles and Other Large Industrial Equipment
In our power device business, we are contributing to the realization of a decarbonized society by further improving performance and quality through advances in electric power and motor control technologies, and by achieving energy savings in power electronics equipment. In particular, power semiconductor modules for large industrial equipment such as railway vehicles are required not only to deliver high output and high efficiency but also to improve moisture resistance, which is essential for stable operation in harsh environments such as outdoors, where temperature and humidity fluctuate greatly. In the HVIGBT*1 Module XB Series, we have adopted proprietary diode and IGBT elements to reduce switching loss compared to existing products (by approximately 15%*2 for the 3.3 kV type and approximately 5%*3 for the 4.5 kV type). By adopting a proprietary chip termination structure, we have improved moisture resistance to approximately 20 times*4 that of existing products. These improvements contribute to the further improved efficiency and reliability of our inverters for large industrial equipment such as railway vehicles operating in various environments, thereby supporting the realization of carbon neutrality.
- 1 HVIGBT: High Voltage Insulated Gate Bipolar Transistor
- 2 Comparison of the existing product, CM1500HC-66R, and the new product in terms of Eon + Eoff + Erec, at Tj = 150°C, VCC = 1800 V, IC = 1500 A
- 3 Comparison of the existing product, CM1200HC-90R, and the new product in terms of Eon + Eoff + Erec, at Tj = 125°C, VCC = 2800 V, IC = 1200 A
- 4 Condensation resistance verification results: 3.3 kV XB Series vs. existing H Series (same terminal design for 3.3 kV and 4.5 kV types)
HVIGBT Module XB Series High-Capacity Power Semiconductors for Large Industrial Equipment
Standard insulation product (left); high insulation product (right)
Related link
Optical Communication Devices: Contributing to High-Speed Communication in Data Centers
200Gbps EML chip for next-generation data centers
200Gbps EML chip for next-generation data centers
- 1 Electro-absorption Modulator integrated Laser diode: A semiconductor laser diode integrated with an electro-absorption optical modulator.
- 2 An electronic component that converts electrical signals into optical signals and back again.
- 3 Giga-bits per second: A transmission speed that sends 1 billion digital signals per second.
- 4 Tera-bits per second: A transmission speed that sends 1 trillion digital signals per second.
Related link