PSH15SG1G6
VCES: 600 V, ±IC: 15 A
SiC-MOSFET significantly reduces power loss compared to current Si-based products for more energy-efficient appliances.
Features
- For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage protection (UV).
- For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT).
- Fault signaling : Corresponding to SC fault (N-side MOSFET), UV fault (N-side supply) and OT fault.
- Temperature output : Outputting LVIC temperature by analog signal.
- Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active).
- DIPIPM, SLIMDIP, DIPIPM+, SOPIPM, DIPPFC and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION.
Applications
- Air conditioner
- Cloth washer
- Refrigerator
- Dish washer
- Fan
- Pump
Specifications
| Parameters | Value | Unit |
|---|---|---|
| VCES | 600 | V |
| ±IC | 15 | A |
| Isolation voltage | 2000 | Vrms |
| Tj, Tch | 150 | ℃ |
| Connection | 6-PACK | |
| Package type | SLIMDIP | |
| Supply situation | Under development | |
| UL Recognition : UL1557 | ― |
Documents
Corresponding Products
Full SiC Duper Mini DIPIPM
VDSS = 600V
ID = 15A～25A
SLIMDIP
VCES = 600V
ID = 5A～600A
Links to associated page
Simulation Software
Simplified simulator for quick power-module calculations.
FAQ
Answers to frequently asked questions.
Evaluation boards