Skip to main content

Start main contents

Semiconductors & Devices

High Frequency Devices

GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4965BM

Parameter Level Value Unit
Supply situation   In production  
Frequency Typ 20 GHz
Drain-Source Voltage Typ 2 V
Drain Current   10 mA
Package   GD-30  
Noise Figure   0.95(typ) 1.25(max) dB
Associated Gain   9.5(min) 11.5(typ) dB
Quality level   -  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 07/17/2019 pdf PDF 195KB English
S-parameter - 03/18/2015 txt S2P 3KB -