GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFG5H1503
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Frequency | 13.75～14.5 | GHz | |
| Drain-Source Voltage | Typ | 24 | V |
| Output Power | Typ | 20 | W |
| Package | GF-65 | ||
| Power Added Efficiency | Typ | - | % |
| Linear Power Gain | Typ | 22.0(min) 24.0(typ) | dB |
| Output Power at 3dB Gain Compression | 42.0(min) 43.0(typ) | ||
| 3rd order InterModulation distortion | -25(min) | dBc | |
| Product Type | MMIC | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
MMIC : Monolithic Microwave Integrated Circuit
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 07/16/2021 |  PDF |
402KB | English |