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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFG5H1503

Parameter Level Value Unit
Supply situation   In production  
Frequency   13.75~14.5 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 20 W
Package   GF-65  
Power Added Efficiency Typ - %
Linear Power Gain Typ 22.0(min) 24.0(typ) dB
Output Power at 3dB Gain Compression   42.0(min) 43.0(typ)  
3rd order InterModulation distortion   -25(min) dBc
Product Type   MMIC  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


MMIC : Monolithic Microwave Integrated Circuit
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 07/16/2021 pdf PDF 402KB English