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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFK45G3745

Parameter Level Value Unit
Supply situation   In production  
Frequency   13.75~14.5 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 30 W
Package   GF-68  
Power Added Efficiency Typ 31 %
Linear Power Gain Typ 9.5 dB
Output Power at 3dB Gain Compression   -  
3rd order InterModulation distortion   -25 dBc
Product Type   IMFET  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  

Remarks

IMFET : Internally Matched Field Effect Transistor
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 02/18/2021 pdf PDF 292KB English