GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFK50G3745
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Frequency | 13.75～14.5 | GHz | |
| Drain-Source Voltage | Typ | 24 | V |
| Output Power | Typ | 100 | W |
| Package | GF-69 | ||
| Power Added Efficiency | Typ | 30 | % |
| Linear Power Gain | Typ | 8.0(min) 10.0(typ) | dB |
| Output Power at 3dB Gain Compression | 49.0(min) 50.0(typ) | ||
| 3rd order InterModulation distortion | -25(typ) | dBc | |
| Product Type | IMFET | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
IMFET : Internally Matched Field Effect Transistor
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 07/16/2021 |  PDF |
478KB | English |