GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFK50G3745
Parameter | Level | Value | Unit |
---|---|---|---|
Supply situation | In production | ||
Frequency | 13.75~14.5 | GHz | |
Drain-Source Voltage | Typ | 24 | V |
Output Power | Typ | 100 | W |
Package | GF-69 | ||
Power Added Efficiency | Typ | 30 | % |
Linear Power Gain | Typ | 8.0(min) 10.0(typ) | dB |
Output Power at 3dB Gain Compression | 49.0(min) 50.0(typ) | ||
3rd order InterModulation distortion | -25(typ) | dBc | |
Product Type | IMFET | ||
RoHS Directive | Compliant with RoHS (2011/65/EU、(EU) 2015/863) |
Remarks
IMFET : Internally Matched Field Effect Transistor
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment