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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FET Modules RA07N4452M

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 9.6 V
Frequency (Min - Max)   440~520 MHz
Output Power   7.5 W
Package   H46S  
Input Power Typ 20 mW
Drain Efficiency (Min)   43 %
Feature   -  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 05/20/2020 pdf PDF 636KB English