Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2
Parameter | Level | Value | Unit |
---|---|---|---|
Supply situation | In production | ||
Drain Voltage | Typ | 7.2 | V |
Frequency | 520 | MHz | |
Output Power (Min) | 0.8 | W | |
Package | SOT-89 | ||
Input Power (Typ) | 0.03 | W | |
Drain Efficiency (Min) | 50 | % | |
Feature | built in Gate Protection Diode | ||
RoHS Directive | Compliant with RoHS (2011/65/EU、(EU) 2015/863) |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment