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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD02MUS2

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 7.2 V
Frequency   175 / 520 MHz
Output Power (Min)   2 W
Package   SLP  
Input Power (Typ)   0.05 W
Drain Efficiency (Min)   55 / 50 %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

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