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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD04HMS2

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Frequency   750 / 950 MHz
Output Power (Min)   5.5 / 5.0(typ) W
Package   SLP  
Input Power (Typ)   0.2 W
Drain Efficiency (Min)   73 / 58(typ) %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  

Remarks

RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 06/26/2019 pdf PDF 611KB English
S-parameter - 06/02/2017 txt S2P 75KB English