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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1

Parameter Level Value Unit
Supply situation   Not recommended for new designs  
Drain Voltage Typ 12.5 V
Frequency   175 MHz
Output Power (Min)   6 W
Package   TO-220S  
Input Power (Typ)   0.3 W
Drain Efficiency (Min)   60 %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 06/26/2019 pdf PDF 712KB English