Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | Not recommended for new designs | ||
| Drain Voltage | Typ | 12.5 | V |
| Frequency | 175 | MHz | |
| Output Power (Min) | 6 | W | |
| Package | TO-220S | ||
| Input Power (Typ) | 0.3 | W | |
| Drain Efficiency (Min) | 60 | % | |
| Feature | built in Gate Protection Diode | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 06/26/2019 |  PDF |
712KB | English |