Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1C
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Drain Voltage | Typ | 12.5 | V |
| Frequency | 30 | MHz | |
| Output Power (Min) | 100 | W | |
| Package | Ceramic(Large) | ||
| Input Power (Typ) | 7 | W | |
| Drain Efficiency (Min) | 55 | % | |
| Feature | - | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 06/26/2019 |  PDF |
467KB | English |
| S-parameter | - | 06/02/2017 |  S2P |
121KB | English |