Silicon RF Devices RF High Power MOS FETs (Discrete) RD12MVP1
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Drain Voltage | Typ | 7.2 | V |
| Frequency | 175 | MHz | |
| Output Power (Min) | 10 | W | |
| Package | PMM | ||
| Input Power (Typ) | 0.5 | W | |
| Drain Efficiency (Min) | 55 | % | |
| Feature | built in Gate Protection Diode | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 06/14/2022 |  PDF |
294KB | English |
| S-parameter | - | 08/21/2017 |  S2P |
25KB | English |