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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD12MVS1

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 7.2 V
Frequency   175 MHz
Output Power (Min)   11.5 W
Package   SLP  
Input Power (Typ)   1 W
Drain Efficiency (Min)   55 %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  

Remarks

RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 06/27/2019 pdf PDF 728KB English