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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD35HUF2

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Frequency   175 / 530 MHz
Output Power (Min)   45 / 43(typ) W
Package   HPM  
Input Power (Typ)   3 W
Drain Efficiency (Min)   72 / 60(typ) %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 04/17/2019 pdf PDF 994KB English
S-parameter - 04/17/2019 txt S2P 169KB English