Silicon RF Devices RF High Power MOS FETs (Discrete) RD35HUF2
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Drain Voltage | Typ | 12.5 | V |
| Frequency | 175 / 530 | MHz | |
| Output Power (Min) | 45 / 43(typ) | W | |
| Package | HPM | ||
| Input Power (Typ) | 3 | W | |
| Drain Efficiency (Min) | 72 / 60(typ) | % | |
| Feature | built in Gate Protection Diode | ||
| RoHS Directive | Compliant with RoHS （2011/65/EU、(EU) 2015/863） |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| Data Sheet | - | 04/17/2019 |  PDF |
994KB | English |
| S-parameter | - | 04/17/2019 |  S2P |
169KB | English |