Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HUF2
Parameter | Level | Value | Unit |
---|---|---|---|
Supply situation | In production | ||
Drain Voltage | Typ | 12.5 | V |
Frequency | 175 / 530 | MHz | |
Output Power (Min) | 84 / 75(typ) | W | |
Package | HPM | ||
Input Power (Typ) | 4 / 5.5 | W | |
Drain Efficiency (Min) | 74 / 64(typ) | % | |
Feature | built in Gate Protection Diode | ||
RoHS Directive | Compliant with RoHS (2011/65/EU、(EU) 2015/863) |
Remarks
RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment