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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1C

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Frequency   175 / 520 MHz
Output Power (Min)   70 / 50 W
Package   Ceramic(Large)  
Input Power (Typ)   4/ 10 W
Drain Efficiency (Min)   50 / 50 %
Feature   built in Gate Protection Diode  
RoHS Directive   Compliant with RoHS (2011/65/EU、(EU) 2015/863)  


RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Related documents

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Data Sheet - 06/27/2019 pdf PDF 696KB English
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