Features

• SiC-MOSFET

• SiC-MOSFETs enable lower loss and higher frequency operation than conventional Si-IGBTs, contributing to system miniaturization.
• By forming a high-quality gate oxide film in the trench structure, Vth drift and power loss degradation are suppressed during long-term use.
• In addition to the Bottom P-Well structure that protects the gate oxide film, Mitsubishi original structure (SPW^*1, J-FET doping^*2) realizes high gate reliability, low Ron, and low switching loss.

• *1：Side P-Well in Trench Devices
• *2：Technology to increase the impurity concentration in the JFET (Junction Field Effect Transistor) region and increase the density of the device.

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• RC-IGBT

• By forming the IGBT and FWD on a single chip, the chip mounting area is significantly reduced compared to conventional cases where the IGBT and FWD are placed separately, contributing to the miniaturization of systems.
• The third generation RC-IGBT uses the anode-cathode structure that suppresses carrier injection efficiency, thereby reducing the recovery loss of the FWD.
• Built-in on-chip temperature sensor and on-chip current sensor