J3 Series
Automotive SiC / Si Power Module
With its compact size and extensive product lineup, it can be used with a wide range of xEVs, helping to extend driving range and improve power consumption.
The miniaturization of xEV inverters has been made possible, and the lineup of J3-T-PM*1 , J3-HEXA-S, and J3-HEXA-L supports inverter design for a wide range of electric capacities.
*1：Transfer molded Power Module
Features
- About 60% smaller modules compared to existing products*2 , which will contribute to smaller xEV inverters
- Two types of semiconductor elements are used: SiC-MOSFETs and RC-IGBTs (Si)
- SiC-MOSFET uses a low-loss trench type
- The RC-IGBT (Si) uses a new structure that combines an IGBT and a freewheeling diode (FWD) on a single chip
- Comprehensive lineup*3 with various J3-T-PM combinations for scalable xEV inverter designs
- *2 : 2in1 J-Series T-PM(CT300DJH120)
- *3 : J3-T-PM and J3-HEXA-S with three J3-T-PMs, and J3-HEXA-L with six J3-T-PMs
Applications
- EV・HEV
- High reliability inverter
Lineup
| Type | Connection | Device | VDSS / VCES (V) | ID / IC (A) | Type Name | Status |
|---|---|---|---|---|---|---|
| J3-T-PM | 2in1 | SiC MOSFET | 1300 | 350 | Under development | |
| Si RC-IGBT | 750 | 400 | Under development | |||
| J3-HEXA-S |
6in1 with Pin-Fin Base |
SiC MOSFET | 1300 | 350 | Under development | |
| Si RC-IGBT | 750 | 400 | Under development | |||
| J3-HEXA-L |
6in1 with Pin-Fin Base |
SiC MOSFET | 1300 | 700 | Under development | |
| Si RC-IGBT | 750 | 800 | Under development |
Please contact us for samples, datasheets and application notes.
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