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Mitsubishi Electric Develops Ultra-Wideband Digitally Controlled GaN Amplifier for Mobile Base Stations

Expected to contribute to large-capacity communication and reduce power consumption of mobile base stations

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FOR IMMEDIATE RELEASE No. 3237

TOKYO, January 10, 2019 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its development of the world's first*ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency** rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

  1. * According to Mitsubishi Electric research as of January 10, 2019
  2. ** Output power level equivalent to 6.5dB peak-to-average power ratio (PAPR) modulated signal

Ultra-wideband digitally controlled GaN amplifier

Ultra-wideband digitally controlled GaN amplifier

Key Features

  1. 1) Novel load modulation achieves wideband operation and contributes to large-capacity communication
    • Mitsubishi Electric's novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier's high-efficiency operation, for wideband (1.4-4.8GHz) operation.
    • Wide-band operation of amplifier supports several frequency bands.
  2. 2) Digital control realizes high-efficiency operation and reduces power consumption of mobile base stations
    • Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart®***.
    • Improved efficiency of amplifier helps to reduce power consumption in mobile base stations.
    1. *** Mitsubishi Electric's AI creates the State-of-the- ART in technologyMaisart



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